Datasheet > 2SB0942A|2SB942A

2SB0942A|2SB942A

更新时间： 2024-11-22 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	85K
描述
Power Device - Power Transistors - General-Purpose power amplification

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB0942A|2SB942A 数据手册

Power Transistors

2SB0942 (2SB942), 2SB0942A (2SB942A)

Silicon PNP epitaxial planar type

For low-frequency power amplification

Unit: mm

Complementary to 2SD1267, 2SD1267A

10.0 0.2

5.5 0.2

4.2 0.2

2.7 ^0.2

■ Features

• High forward current transfer ratio h_FEwhich has satisfactory linearity

• Large collector-emitter saturation voltage V_CE(sat)

• Full-pack package which can be installed to the heat sink with one screw

φ 3.1 0.1

■ Absolute Maximum Ratings T_C= 25°C

1.3 0.2

Parameter

Symbol

Rating

Unit

1.4 0.1

2SB0942

2SB0942A

2SB0942

2SB0942A

V_CBO

−60

+0.2

–0.1

Collector-base voltage

(Emitter open)

0.5

0.8 0.1

−80

V_CEO

−60

Collector-emitter voltage

(Base open)

2.54 0.3

5.08 0.5

−80

1: Base

Emitter-base voltage (Collector open) V_EBO

−5

2: Collector

3: Emitter

EIAJ: SC-67

2 3

Collector current

Peak collector current

Collector power

I_C

I_CP

P_C

−4

−8

TO-220F-A1 Package

dissipation

T_a= 25°C

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

−60

−80

Typ

Max

Unit

2SB0942

V_CEO

I_C= −30 mA, I_B= 0

Collector-emitter voltage

(Base open)

2SB0942A

Base-emitter voltage

V_BE

I_CES

V_CE= −4 V, I_C= −3 A

V_CE= −60 V, V_BE= 0

V_CE= −80 V, V_BE= 0

V_CE= −30 V, I_B= 0

V_EB= −5 V, I_C= 0

−2

2SB0942

−400

−700

−1

µA

Collector-emitter

cutoff current (E-B short)

2SB0942A

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_CEO

I_EBO

µA



h_FE1

V_CE= −4 V, I_C= −1 A

V_CE= −4 V, I_C= −3 A

250

h_FE2

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −4 A, I_B= − 0.4 A

−1.5

MHz

µs

f_T

t_on

t_stg

t_f

V_CE= −10 V, I_C= − 0.1 A, f = 10 MHz

0.2

0.5

0.2

I_C= −4 A, I_B1= − 0.4 A, I_B2= 0.4 A

V_CC= −50 V

Storage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

40 to 90

70 to 150

120 to 250

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2003

SJD00022BED

12 3

中文翻译

下载PDF

与2SB0942A|2SB942A相关器件

型号	品牌	获取价格	描述	数据表
2SB0942AP	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-220AB
2SB0942APQ	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB0942AQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 4A I(C) \| TO-220AB
2SB0942AR	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0942P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 4A I(C) \| TO-220AB
2SB0942PQ	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB0942Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 4A I(C) \| TO-220AB
2SB0942R	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0943P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 3A I(C) \| TO-220F
2SB0943Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 3A I(C) \| TO-220F

与2SB0942A|2SB942A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB0942A|2SB942A

2SB0942A|2SB942A 数据手册

与2SB0942A|2SB942A相关器件

与2SB0942A|2SB942A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB0942A|2SB942A

2SB0942A|2SB942A 数据手册

与2SB0942A|2SB942A相关器件

与2SB0942A|2SB942A相关文章

您还可以找

您在本页遇到什么问题？