Datasheet > 2SA949-O(TPE6)

2SA949-O(TPE6)

更新时间： 2024-11-05 14:46:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	111K
描述
TRANSISTOR,BJT,PNP,150V V(BR)CEO,50MA I(C),TO-92VAR

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中文翻译

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技术参数
数据手册

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2SA949-O(TPE6) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	0.05 A	配置：	Single
最小直流电流增益 (hFE)：	70	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.8 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SA949-O(TPE6) 数据手册

2SA949

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA949

Driver-Stage Audio Amplifier Applications

Unit: mm

High-Voltage Switching Applications

•

High breakdown voltage: V

= −150 V

CEO

Low output capacitance: C = 4.0 pF (typ.)

High transition frequency: f = 120 MHz (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−150

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

800

JEDEC

JEITA

TO-92MOD

150

―

stg

−55 to 150

TOSHIBA

2-5J1A

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.36 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-21

12 3 4

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