Datasheet > 2SA950-Y(TPE2)

2SA950-Y(TPE2)

更新时间： 2024-09-10 14:18:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	154K
描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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2SA950-Y(TPE2) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

2SA950-Y(TPE2) 数据手册

2SA950

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA950

Audio Power Amplifier Applications

Unit: mm

•

High h : h

= 100~320

FE FE

1 W output applications

Complementary to 2SC2120

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−35

−30

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−800

−160

600

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150

JEDEC

JEITA

TO-92

stg

−55~150

SC-43

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-5F1B

Weight: 0.21 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= −35 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

⎯

−0.1

⎯

μA

CBO

Emitter cut-off current

= −5 V, I = 0

EBO

(BR) CEO

Collector-emitter breakdown voltage

= −10 mA, I = 0

−30

FE (1)

(Note)

= −1 V, I = −100 mA

100

⎯

320

DC current gain

= −1 V, I = −700 mA

⎯

−0.7

−0.8

⎯

FE (2)

Collector-emitter saturation voltage

Base-emitter voltage

= −500 mA, I = −20 mA

CE (sat)

= −1 V, I = −10 mA

−0.5

⎯

Transition frequency

= −5 V, I = −10 mA

120

MHz

Collector output capacitance

= −10 V, I = 0, f = 1 MHz

⎯

Note: h

classification O: 100~200, Y: 160~320

FE (1)

2007-11-01

12 3

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