Datasheet > 2SA952

2SA952

更新时间： 2023-12-06 20:10:33

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先科 - SWST		晶体管
页数	文件大小	规格书
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2SA952 数据手册

2SA952

PNP Silicon Epitaxial Planar Transistor

The transistor is subdivided into three group, M, L

and K according to its DC current gain.

Features

• On special request, these transistors can be

manufactured in different pin configurations

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Applications

• For switching and AF amplifier applications

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

700

Base Current

-I_B

150

Power Dissipation

P_tot

600

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

208

Unit

Thermal Resistance from Junction to Ambient

1 / 5

Dated : 20/04/2023 Rev: 02

12 3 4 5

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