5秒后页面跳转
2SA950-Y-BP PDF预览

2SA950-Y-BP

更新时间: 2024-01-03 10:46:56
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
2页 260K
描述
Small Signal Bipolar Transistor,

2SA950-Y-BP 技术参数

是否Rohs认证:符合生命周期:End Of Life
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
Is Samacsys:N最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):160JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SA950-Y-BP 数据手册

 浏览型号2SA950-Y-BP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
2SA950-O  
2SA950-Y  
Micro Commercial Components  
Features  
ꢀꢁ Complementary Pair With 2SC2120  
ꢀꢁ Epoxy meets UL 94 V-0 flammability rating  
ꢀꢁ Moisure Sensitivity Level 1  
ꢀꢁ Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
ꢀꢁ 1W Output Applications  
PNP Silicon  
Transistors  
TO-92  
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
-30  
Unit  
V
A
E
-35  
V
-5.0  
V
B
-800  
mA  
mW  
OC  
OC  
PC  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
600  
TJ  
150  
TSTG  
-55 to +150  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
C
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
(IC=-100uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IC=-10mAdc, IB=0)  
Emitter-Base Breakdown Voltage  
(IE=-100uAdc, IC=0)  
Collector-Base Cutoff Current  
(VCB=-35Vdc,IE=0)  
-35  
-30  
-5.0  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
---  
Vdc  
D
---  
-0.1  
-0.1  
uAdc  
uAdc  
IEBO  
Emitter-Base Cutoff Current  
(VEB=-5.0Vdc, IC=0)  
---  
---  
---  
E
ON CHARACTERISTICS  
E
C
C
B
B
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
G
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
DC Current Gain*  
(IC=-100mAdc, VCE=-1.0Vdc)  
DC Current Gain  
(IC=-700mAdc, VCE=-1.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-500mAdc, IB=-20mAdc)  
Base-Emitter Voltage  
(IC=-10mAdc, VCE=-1.0Vdc)  
Transition Frequency  
100  
35  
320  
---  
DIMENSIONS  
MM  
---  
---  
---  
0.7  
0.8  
---  
Vdc  
Vdc  
MHz  
pF  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
DIM  
A
B
C
D
MAX  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
-0.5  
---  
.190  
.190  
.590  
.020  
.160  
.104  
fT  
120  
19  
(VCE=-5Vdc, IC=-10mAdc)  
E
G
Cob  
Collector Output Capacitance  
(VCB=-10Vdc, IE=0, f=1.0MHz)  
---  
---  
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
* hFE rank / O: 100-200, Y:160-320,  
www.mccsemi.com  
1 of 2  
Revision: A  
2012/11/22  

与2SA950-Y-BP相关器件

型号 品牌 描述 获取价格 数据表
2SA952 NEC PNP SILICON TRANSISTOR

获取价格

2SA952 SWST 小信号晶体管

获取价格

2SA952 FOSHAN TO-92

获取价格

2SA952-A NEC Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

获取价格

2SA952K CJ Transistor

获取价格

2SA952-K-A NEC 暂无描述

获取价格