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2SA950 PDF预览

2SA950

更新时间: 2024-11-05 12:54:35
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 135K
描述
TRANSISTOR (PNP)

2SA950 数据手册

  
RoHS  
2SA950  
2SA950  
TRANSISTOR (PNP)  
TO-92  
FEATURE  
Power dissipation  
1. EMITTER  
2. COLLECTOR  
3. BASE  
PCM : 0.6 W (Tamb=25)  
Collector current  
ICM  
-0.8  
A
:
1 2 3  
Collector-base voltage  
(BR)CBO : -35 V  
Operating and storage junction temperature range  
V
Tj, Tstg:  
-55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= -1mA , IE=0  
MIN  
-35  
-30  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= -10 mA , IB=0  
IE= -1Ma, IC=0  
V
V
VCB= -35V, IE=0  
-0.1  
-0.1  
320  
µA  
µA  
IEBO  
VEB= -5V, IC=0  
Emitter cut-off current  
hFE(1)  
VCE=-1V, IC=-100mA  
VCE=-1V, IC= -700mA  
IC= -500mA, IB= -20mA  
100  
35  
DC current gain  
hFE(2)  
VCE(sat)  
-0.7  
V
Collector-emitter saturation voltage  
Collector Output Capacitance  
Transition frequency  
VCB=-10V, IE=0  
f=1MHZ  
Cob  
f T  
19  
pF  
VCE=-5V, IC=-10mA,  
120  
MHz  
WEJ ELECTRONIC CO.,LTD  
CLASSIFICATION OF hFE(1)  
O
Y
Rank  
100-200  
160-320  
Range  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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