Datasheet > 2SA1981SF

2SA1981SF

更新时间： 2024-11-20 06:22:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	36K
描述
PNP Silicon Transistor

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中文翻译

获取价格

数据手册

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2SA1981SF 数据手册

SMD Type

TransistIoCrs

PNP Silicon Transistor

2SA1981SF

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High Hfe:.hFE=100 to 320

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-35

Unit

-30

-5

-800

Collector dissipation

Junction temperature

Storage temperature

P^C

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-35

-30

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOIC=-500ìA , IE=0

BV^CEOIC=-1mA , IB=0

BV^EBOIE=-50ìA, IC=0

I^CBO

IEBO

h^FE

VCB=-35V, IE=0

VEB=-5V, IC=0

-0.1

320

-0.5

ìA

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

VCE=-1V, IC=-100mA

100

V^CE(sat)IC/IB=-500mA/-20mA

f^T

VCE=-5V, IE=10mA,

120

MHz

Output capacitance

C^ob

VCB=-10V, IE=0, f=1MHz

hFE Classification

Marking

Rank

hFE

100 200

160 320

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