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2SA1981SFY

更新时间： 2024-02-16 04:16:48

品牌	Logo	应用领域
可天士 - KODENSHI		晶体放大器小信号双极晶体管功率放大器
页数	文件大小	规格书
4页	226K
描述
TRANSISTOR,BJT,PNP,30V V(BR)CEO,800MA I(C),SOT-23VAR

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2SA1981SFY 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.72	Base Number Matches：	1

2SA1981SFY 数据手册

2SA1981

PNP Silicon Transistor

Description

• Audio power amplifier application

PIN Connection

Features

• High h_FE: h_FE=100~320

• Complementary pair with 2SC5344

TO-92

Ordering Information

Type NO.

Marking

Package Code

2SA1981

A1981

TO-92

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

Ratings

-35

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

V_CBO

V_CEO

V_EBO

I_C

-30

-5

-800

500

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

(Ta=25°C)

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Symbol

Test Condition

Min. Typ. Max. Unit

BV_CBO

BV_CEO

BV_EBO

I_CBO

I_C=-500μA, I_E=0

I_C=-1mA, I_B=0

-35

-30

-5

I_E=-50μA, I_C=0

V_CB=-35V, I_E=0

-0.1

320

-0.5

μA

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

DC current gain

V_CE=-1V, I_C=-100mA

I_C=-500mA, I_B=-20mA

V_CE=-5V, I_E=10mA

V_CB=-10V, I_E=0, f=1MHz

100

h_FE

Collector-Emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

120

MHz

Collector output capacitance

* : h_FErank / O : 100~200, Y : 160~320

Cob

KSD-T0A017-001

12 3 4

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