Datasheet > 2SA1981Y

2SA1981Y

更新时间： 2024-11-20 14:50:23

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	112K
描述
Transistor

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技术参数
数据手册

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2SA1981Y 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

2SA1981Y 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO – 92

2SA1981 TRANSISTOR (PNP)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES

High DC Current Gain

Complementary Pair with 2SC5344

APPLICATIONS

Audio Power Amplifier Application

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-35

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Current

-800

625

℃/W

℃

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

T_j

200

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-35

-30

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -0.5mA,I_E=0

I_C=-1mA,I_B=0

I_E=-0.05mA,I_C=0

V_CB=-35V,I_E=0

-0.1

320

-0.5

μA

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

DC current gain

h_FE

V_CE=-1V, I_C=-100mA

I_C=-500mA,I_B=-20mA

V_CB=-10V,I_E=0, f=1MHz

VCE=-5V,IC=-10mA

100

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

V_CE(sat)

C_ob

f_T

120

MHz

CLASSIFICATION OF h_FE

RANK

RANGE

100-200

160-320

A,Dec,2010

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