Datasheet > 2SA1986_06

2SA1986_06

更新时间： 2024-11-18 07:29:47

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	131K
描述
Power Amplifier Applications

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数据手册

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2SA1986_06 数据手册

2SA1986

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA1986

Power Amplifier Applications

Unit: mm

•

High breakdown voltage: V

= −230 V (min)

CEO

Complementary to 2SC5358

Recommended for 80-W high-fidelity audio frequency amplifier

output stage

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−230

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−15

−1.5

Base current

Collector power dissipation

(Tc = 25°C)

150

JEDEC

JEITA

―

Junction temperature

Storage temperature range

150

°C

stg

−55 to 150

TOSHIBA

2-16C1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 4.7 g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4

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2SA1986O	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 230V V(BR)CEO \| 15A I(C) \| TO-247VAR
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2SA1986R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 230V V(BR)CEO \| 15A I(C) \| TO-247VAR
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