Datasheet > 2SA1987O

2SA1987O

更新时间： 2024-02-13 21:40:11

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
3页	104K
描述
Transistor

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技术参数
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2SA1987O 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SA1987O 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1987

DESCRIPTION

·With TO-3PL package

·Complement to type 2SC5359

·High collector voltage

APPLICATIONS

·Power amplifier applications

·Recommended for 100W high fidelity audio

frequency amplifier output stage

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PL) and symbol

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

MAX

-230

-5

UNIT

Open base

Open collector

-15

I_B

Base current

-1.5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

180

℃

T_j

150

T_stg

-55~150

12 3

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