Datasheet > 2SA1989R

2SA1989R

更新时间： 2024-09-17 21:04:19

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	419K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SA1989R 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SA1989R 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SA1989

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE(Ultra super mini type)

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

2SA1989 is a ultra super mini package resin sealed

silicon PNP epitaxial transistor,

It is designed for low frequency voltage application.

1.6

0.8

0.4

①

②

③

FEATURE

●Small collector to emitter saturation voltage.

VCE(sat)=-0.3V max（@ I _C=-30mA ,I_B=-1.5mA）

●Excellent linearity of DC forward gain.

●Super mini package for easy mounting

APPLICATION

For Hybrid IC,small type machine low frequency voltage

Amplify application.

JEITA：SC-75A

TERMINAL CONNECTER

①：BASE

MAXIMUM RATINGS（Ta=25℃）

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

-50

Unit

②：EMITTER

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

③：COLLECTOR

-50

-6

-100

℃

P_c

Collector dissipation

Junction temperature

Storage temperature

150

T_j

＋150

-55～＋150

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

Min

-50

Typ

Max

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

C to E Saturation Vlotage

Gain bandwidth product

Collector output capacitance

V(BR)CEO

ICBO

IEBO

I _C=-100μA ,R _BE=∞

V _CB=-50V, I _E=0mA

V _EB=-4V, I _C=0mA

-0.5

820

μA

hFE

_CE=-6V, I _C=-1mA

_CE=-6V, I _C=-0.1mA

※

120

hFE

VCE(sat) I _C=-30mA ,I_B=-1.5mA

-0.3

_CE=-6V, I _E=10mA

200

2.5

MHz

Cob

V _CB=-6V, I _E=0,f=1MHz

※） It shows hFE classification in below table.

Item

120～270

180～390

270～560

390～820

ｈＦＥ Item

ISAHAYA ELECTRONICS CORPORATION

12 3 4

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