Datasheet > 2SA1981SF-O

2SA1981SF-O

更新时间： 2024-11-19 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	814K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1981SF-O 数据手册

SMD Type

TransistIoCrs

PNP Transistors

2SA1981SF

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

Features

High hFE: hFE=100 to 320

● Complementary pair with 2SC5344SF

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-35

Unit

-30

-5

-800

Collector dissipation

Junction temperature

Storage temperature

P^C

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Ic= -500 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-35

-30

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= -35 V , I

-100

-0.5

-1.2

320

EB= -5V , IC=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-500 mA, I

=- 20mA

C=-500 mA, I

CE= -1V, I

CE= -10V,I

CE= -5V, I

= -100mA

100

Output capacitance

=0,f=1MHz

Transition frequency

= -10mA

120

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SA1981SF-O 2SA1981SF-Y

100-200

EAO*

160-320

EAY*

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