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2SA1862 PDF预览

2SA1862

更新时间: 2024-09-16 22:52:39
品牌 Logo 应用领域
罗姆 - ROHM 晶体开关晶体管
页数 文件大小 规格书
3页 94K
描述
High-voltage Switching Transistor (−400V, −2A)

2SA1862 数据手册

 浏览型号2SA1862的Datasheet PDF文件第2页浏览型号2SA1862的Datasheet PDF文件第3页 
2SA1862  
Transistors  
High-voltage Switching Transistor  
(400V, 2A)  
2SA1862  
zExternal dimensions (Unit : mm)  
zFeatures  
1) High breakdown voltage. (BVCEO = 400V)  
2) Low saturation voltage.  
5.5  
0.9  
1.5  
(Typ. VCE (sat) = 0.3V at IC / IB = 500mA / 100mA)  
3) High switching speed, typically tf = 0.4µs at IC = 1A.  
4) Wide SOA (safe operating area).  
C0.5  
0.8Min.  
(1) Base(Gate)  
1.5  
(2) Collector(Drain)  
(3) Emitter(Source)  
2.5  
ROHM : CPT3  
EIAJ : SC-63  
9.5  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
400  
400  
7  
V
V
V
A (DC)  
A (Pulse)  
W
2  
4  
Collector current  
IC  
1
10  
Collector power dissipation  
PC  
W (Tc=25°C)  
°C  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Single pulse, Pw=10ms  
zPackaging specifications and hFE  
Type  
2SA1862  
CPT3  
P
Package  
hFE  
Code  
Basic ordering unit (pieces)  
TL  
2500  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Emitter cutoff current  
BVCBO  
BVCEO  
BVEBO  
400  
0.3  
18  
30  
0.2  
1.8  
0.4  
10  
10  
0.5  
1.2  
180  
V
V
I
I
I
C
= −50µA  
= −1mA  
400  
7  
82  
C
V
E= −50µA  
CB= −400V  
EB= −5V  
/I  
/I  
I
CBO  
µA  
µA  
V
V
I
EBO  
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
DC current transfer ratio  
Transition frequency  
V
V
CE(sat)  
I
I
C
B
= −0.5A/ 0.1A  
= −0.5A/ 0.1A  
CE(sat)  
V
C
B
hFE  
V
V
V
CE= −5V, IC= −0.1A  
CB= −10V, I  
CE= −10V, I  
f
T
MHz  
pF  
µs  
µs  
µs  
E
=0.1A, f=5MHz  
=0A, f=1MHz  
Output capacitance  
Cob  
ton  
tstg  
tf  
E
Turn-on time  
I
I
C
=−1A, R  
B1=−IB2= −0.2A  
150V  
L=150Ω  
Storage time  
Fall time  
V
CC  
Rev.A  
1/2  

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