是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.82 |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 56 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e2 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 功耗环境最大值: | 10 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN COPPER | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1862/P | ROHM |
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Small Signal Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SA1862_1 | ROHM |
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High-voltage Switching Transistor (−400V, −2A) | |
2SA1862F5 | ETC |
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TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 4A I(C) | TO-252 | |
2SA1862F5/N | ROHM |
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Small Signal Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SA1862F5/NP | ROHM |
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Small Signal Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SA1862F5/P | ROHM |
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Small Signal Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SA1862F5N | ETC |
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TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-252 | |
2SA1862F5P | ETC |
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TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-252 | |
2SA1862F5TLNP | ROHM |
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Small Signal Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SA1862F5TLP | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, |