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2SA1615-Z

更新时间: 2024-11-16 06:23:03
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科信 - KEXIN 晶体晶体管开关
页数 文件大小 规格书
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描述
Silicon Power Transistors

2SA1615-Z 数据手册

  
SMD Type  
Transistors  
Silicon Power Transistors  
2SA1615-Z  
TO-252  
Unit: mm  
6.50+0.15  
-0.15  
2.30+0.1  
-0.1  
5.30+0.2  
0.50+0.8  
-0.7  
-0.2  
Features  
Large current capacity.  
High hFE and low collector saturation voltage.  
0.127  
max  
0.80+0.1  
-0.1  
0.60+0.1  
2.3  
4.60+0.15  
-0.1  
1 Base  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-30  
Unit  
V
-20  
V
-10  
V
-10  
A
Collector current pulse  
Base current  
Icp *  
IB  
-15  
A
-0.5  
A
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
1.0  
W
Tj  
150  
Tstg  
-55 to +150  
* PW  
10 ms, duty cycle  
50%  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
-1  
Unit  
ìA  
VCB = -20V, IE=0  
IEBO  
VEB = -8V, IC=0  
-1  
ìA  
VCE = -2V , IC = -0.5A  
VCE = -2.0 V, IC =-4.0 A  
200  
160  
600  
DC current gain *  
hFE  
Collector-emitter saturation voltage *  
Base saturation voltage *  
Gain bandwidth product  
Output capacitance  
Turn-on time  
VCE(sat) IC = -4A , IB = -0.05A  
VBE(sat) IC = -4A , IB = -0.05A  
-0.2 -0.25  
V
-0.9  
180  
220  
80  
-1.2  
fT  
Cob  
ton  
tstg  
tf  
VCE = -5V , IE = 1.5A  
MHz  
pF  
ns  
VCB = -10V , IE = 0 , f = 1.0MHz  
IC = -5.0 A, IB1 = -IB2 = 0.125 A,  
RL = 2.0 , VCC = -10 V  
Storage time  
300  
60  
ns  
Fall time  
ns  
* Pulse test: tp  
350 ìs; d  
0.02.  
hFE Classification  
Marking  
hFE  
L
K
200 400  
300 600  
1
www.kexin.com.cn  

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