是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 10 A | 配置: | Single |
最小直流电流增益 (hFE): | 200 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 15 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1615-Z-T1K | NEC |
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Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, | |
2SA1615-Z-T1L | NEC |
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Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, | |
2SA1615-Z-T2-AZ | RENESAS |
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TRANSISTOR,BJT,PNP,20V V(BR)CEO,10A I(C),TO-252 | |
2SA1615-Z-T2K | NEC |
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Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, | |
2SA1615-Z-T2L | NEC |
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Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, | |
2SA1616 | ETC |
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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAKVAR | |
2SA1617 | TYSEMI |
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Collector-base voltage VCBO -55 V Emitter-base voltage VEBO -5 V | |
2SA1617 | HITACHI |
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Silicon PNP Epitaxial | |
2SA1617 | KEXIN |
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Silicon PNP Epitaxial | |
2SA1617B | ETC |
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BJT |