Datasheet > 2SA1615-ZL-AZ

2SA1615-ZL-AZ

更新时间： 2024-09-26 15:26:27

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	118K
描述
Small Signal Bipolar Transistor, 0.01A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon

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2SA1615-ZL-AZ 数据手册

DATA SHEET

SILICON POWER TRANSISTORS

2SA1615, 1615-Z

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation

and are ideal for high-efficiency DC/DC converters due to the fast switching speed.

FEATURES

• Large current capacity:

I^C(DC): −10 A, I^C(pulse): −15 A

• High h^FEand low collector saturation voltage:

h^FE= 200 MIN. (@V^CE= −2.0 V, I^C= −0.5 A)

V^CE(sat)≤ −0.25 V (@I^C= −4.0 A, I^B= −0.05 A)

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC

Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

Symbol

Ratings

−30

Unit

V^CBO

V^CEO

−20

−10

V^EBO

−10

I^C(DC)

−15

I^C(pulse)*

I^B(DC)

−0.5

P^T(T^a= 25°C)**

P^T(T^c= 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

1.0

°C

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

** Printing board mounted

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16119EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

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与2SA1615-ZL-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SA1615-ZL-E1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,20V V(BR)CEO,10A I(C),TO-252
2SA1615-ZL-E2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,20V V(BR)CEO,10A I(C),TO-252
2SA1615-ZL-T2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,20V V(BR)CEO,10A I(C),TO-252
2SA1615-Z-T1K	NEC	获取价格	Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC,
2SA1615-Z-T1L	NEC	获取价格	Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC,
2SA1615-Z-T2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,20V V(BR)CEO,10A I(C),TO-252
2SA1615-Z-T2K	NEC	获取价格	Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC,
2SA1615-Z-T2L	NEC	获取价格	Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC,
2SA1616	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SPAKVAR
2SA1617	TYSEMI	获取价格	Collector-base voltage VCBO -55 V Emitter-base voltage VEBO -5 V