2SA1576A-Q
2SA1576A-R
2SA1576A-S
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
Features
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Excellent hFE Linearity
Complementary to 2SC4081
PNP Silicon
Epitaxial Transistors
xꢀ
xꢀ
·
Epoxy meets UL 94 V-0 flammability rating
·
·
Moisure Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
Maximum Ratings
Symbol
SOT-323
Rating
Rating
-50
Unit
V
A
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
-60
V
D
C
-6
V
-150
200
150
mA
mW
PC
Collector power dissipation
Junction Temperature
C
B
TJ
к
к
TSTG
Storage Temperature
-55 to +150
E
B
F
E
Electrical Characteristics @ 25 Unless Otherwise Specified
к
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
H
ICBO
Collector Cutoff Current
(VCB=-60Vdc)
---
---
---
---
-100
-100
nAdc
nAdc
G
J
IEBO
Emitter Cutoff Current
(VEB=-6.0Vdc)
K
DIMENSIONS
INCHES
ON CHARACTERISTICS
BVCBO
BVCEO
BVEBO
hFE
Collector-base breakdown voltage
(IC=-50µAdc )
-60
---
---
---
Vdc
Vdc
Vdc
---
MM
DIM
A
B
C
D
E
MIN
.071
.045
.083
MAX
.087
.053
.096
MIN
1.80
1.15
2.10
MAX
NOTE
2.20
1.35
2.45
Collector-emitter breakdown
(I =-1mAdc)
-50
-6
---
---
---
voltage
C
.026 Nominal
0.65Nominal
1.20
.30
.000
.90
.100
.15
.047
.055
.016
.004
.039
.010
.016
1.40
.40
.100
1.00
.250
.40
F
.012
.000
.035
.004
.006
Emitter-base breakdown voltage
(IE=-50µAdc)
---
G
H
J
DC Current Gain
(IC=-1mAdc, VCE=-6.0Vdc)
120
---
560
-0.5
---
K
Suggested Solder
Pad Layout
0.70
VCE(sat)
Collector Saturation Voltage
(IC=-50mAdc, IB=-5.0mAdc)
---
Vdc
pF
Cob
Output Capacitance
(VCB=-12.0Vdc, IE=0, f=1.0MHz)
---
5.0
0.90
mm
1.90
fT
Gain Bandwidth product
(VCE=-12Vdc, IE=2mAdc,f=30MHz)
---
100
---
MHz
h
FE CLASSIFICATION
0.65
Rank
hFE
Q
R
S
0.65
120~270
FQ
180~390
FR
270~560
Marking
FS
www.mccsemi.com
Revision: C
2013/09/24
1 of 3