Datasheet > 2SA1576ART1/D

2SA1576ART1/D

更新时间： 2024-11-03 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体放大器晶体管
页数	文件大小	规格书
4页	46K
描述
General Purpose Amplifier Transistor

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2SA1576ART1/D 数据手册

2SA1576ART1

General Purpose

Amplifier Transistors

PNP Surface Mount

• Moisture Sensitivity Level: 1

• ESD Rating: TBD

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Collector Current - Peak

THERMAL CHARACTERISTICS

Characteristic

(BR)CBO

(BR)CEO

(BR)EBO

Vdc

7.0

Vdc

BASE

EMITTER

100

200

mAdc

C(P)

MARKING DIAGRAM

Symbol

Max

200

Unit

°C

76 M

Power Dissipation

SC-70

CASE 419

Junction Temperature

Storage Temperature

150

stg

- 55 to +150

°C

76 = Specific Device Code

= Date Code

ELECTRICAL CHARACTERISTICS

(T = 25°C unless otherwise noted)

ORDERING INFORMATION

Characteristic

Symbol Min Max

Unit

†

Device

Package

Shipping

Collector-Emitter Breakdown Voltage

7.0

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

(I = 2.0 mAdc, I = 0)

2SA1576ART1

SC-70

3000/Tape & Reel

Collector-Base Breakdown Voltage

(I = 10 mAdc, I = 0)

Vdc

†The “T1” suffix refers to a 7 inch reel.

Emitter-Base Breakdown Voltage

(I = 10 mAdc, I = 0)

Collector-Base Cutoff Current

(V = 60 Vdc, I = 0)

0.1

mAdc

CBO

CEO

Collector-Emitter Cutoff Current

(V = 10 Vdc, I = 0)

0.1

2.0

1.0

mAdc

(V = 30 Vdc, I = 0)

(V = 30 Vdc, I = 0, T = 80°C)

DC Current Gain (Note 1)

(V = 6.0 Vdc, I = 2.0 mAdc)

180

390

0.5

Collector-Emitter Saturation Voltage

(I = 100 mAdc, I = 10 mAdc)

Vdc

CE(sat)

1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

2SA1576ART1/D

May, 2003 - Rev. 1

12 3 4

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