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2SA1576A-S-TP PDF预览

2SA1576A-S-TP

更新时间: 2024-11-18 14:37:11
品牌 Logo 应用领域
美微科 - MCC 光电二极管晶体管
页数 文件大小 规格书
3页 249K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SA1576A-S-TP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.59最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):270JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2SA1576A-S-TP 数据手册

 浏览型号2SA1576A-S-TP的Datasheet PDF文件第2页浏览型号2SA1576A-S-TP的Datasheet PDF文件第3页 
2SA1576A-Q  
2SA1576A-R  
2SA1576A-S  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Excellent hFE Linearity  
Complementary to 2SC4081  
PNP Silicon  
Epitaxial Transistors  
xꢀ  
xꢀ  
·
Epoxy meets UL 94 V-0 flammability rating  
·
·
Moisure Sensitivity Level 1  
Halogen free available upon request by adding suffix "-HF"  
Maximum Ratings  
Symbol  
SOT-323  
Rating  
Rating  
-50  
Unit  
V
A
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
-60  
V
D
C
-6  
V
-150  
200  
150  
mA  
mW  
PC  
Collector power dissipation  
Junction Temperature  
C
B
TJ  
к
к
TSTG  
Storage Temperature  
-55 to +150  
E
B
F
E
Electrical Characteristics @ 25 Unless Otherwise Specified  
к
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
H
ICBO  
Collector Cutoff Current  
(VCB=-60Vdc)  
---  
---  
---  
---  
-100  
-100  
nAdc  
nAdc  
G
J
IEBO  
Emitter Cutoff Current  
(VEB=-6.0Vdc)  
K
DIMENSIONS  
INCHES  
ON CHARACTERISTICS  
BVCBO  
BVCEO  
BVEBO  
hFE  
Collector-base breakdown voltage  
(IC=-50µAdc )  
-60  
---  
---  
---  
Vdc  
Vdc  
Vdc  
---  
MM  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.083  
MAX  
.087  
.053  
.096  
MIN  
1.80  
1.15  
2.10  
MAX  
NOTE  
2.20  
1.35  
2.45  
Collector-emitter breakdown  
(I =-1mAdc)  
-50  
-6  
---  
---  
---  
voltage  
C
.026 Nominal  
0.65Nominal  
1.20  
.30  
.000  
.90  
.100  
.15  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.012  
.000  
.035  
.004  
.006  
Emitter-base breakdown voltage  
(IE=-50µAdc)  
---  
G
H
J
DC Current Gain  
(IC=-1mAdc, VCE=-6.0Vdc)  
120  
---  
560  
-0.5  
---  
K
Suggested Solder  
Pad Layout  
0.70  
VCE(sat)  
Collector Saturation Voltage  
(IC=-50mAdc, IB=-5.0mAdc)  
---  
Vdc  
pF  
Cob  
Output Capacitance  
(VCB=-12.0Vdc, IE=0, f=1.0MHz)  
---  
5.0  
0.90  
mm  
1.90  
fT  
Gain Bandwidth product  
(VCE=-12Vdc, IE=2mAdc,f=30MHz)  
---  
100  
---  
MHz  
h
FE CLASSIFICATION  
0.65  
Rank  
hFE  
Q
R
S
0.65  
120~270  
FQ  
180~390  
FR  
270~560  
Marking  
FS  
www.mccsemi.com  
Revision: C  
2013/09/24  
1 of 3  

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