Datasheet > 2SA1576F

2SA1576F

更新时间： 2024-11-18 06:23:23

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	440K
描述
PNP Silicon General Purpose Transistor

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2SA1576F 数据手册

2SA1576F

PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

Feature

SOT-323

Complements the 2SC4081F

Dim

Min

Max

1.800 2.200

1.150 1.350

0.800 1.000

0.300 0.400

1.200 1.400

0.000 0.100

0.100 0.250

0.350 0.500

0.590 0.720

2.000 2.400

0.280 0.420

COLLECTOR

Top View

BASE

EMITTER

Marking Code: 5AX

X = hFE Rank Code

All Dimension in mm

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

-55~+150

-60

Unit

Tstg

VCBO

VCEO

VEBO

-50

-6

-150

Total Power Dissipation

225

Characteristics at Ta = 25к

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Cutoff Current

Collector Saturation Voltage 1

DC Current Gain

Symbol Min Typ. Max

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

-60

IC=-50uA

IC=-1mA

IE=-50uA

VCB=-60V

VEB=-6V

-50

-6

-100

-500

560

IEBO

VCE(sat)

hFE

IC=-50mA, IB=-5mA

120

VCE=-6V, IC=-1mA

Gain-Bandwidth Product

140

4.0

MHz

VCE=-12V, IE=-2mA, f=100MHz

VCB=-12V, f=1MHz, IE=0

Output Capacitance

Cob

5.0

*Pulse Test: Pulse Width = 380us, Duty Cycle = 2%

Classification of hFE

Rank

Range

120 - 270

180 - 390

270 - 560

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

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