Datasheet > 2SA1577

2SA1577

更新时间： 2024-09-16 06:23:31

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管
页数	文件大小	规格书
1页	46K
描述
Medium Power Transistor

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数据手册

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2SA1577 数据手册

SMD Type

TransistIoCrs

Medium Power Transistor

2SA1577

Features

Large IC.ICMAX. = -500mA

Low VCE(sat). Ideal for low-voltage operation.

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-40

Unit

-32

-5

Collector current

-0.5

Collector power dissipation

Junction temperature

Storage temperature

P^C

0.2

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-40

-32

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOIC= -100ìA

BV^CEOIC= -1mA

BV^EBOIE= -100ìA

I^CBO

VCB= -20V

VEB= -4V

-1

ìA

Emitter cutoff current

IEBO

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

V^CE(sat)VCE= -3V, IC= -100mA

-0.6

390

h^FE

f^T

IC/IB= -300mA/-30mA

VCE= -5V, IE=20mA, f=100MHz

VCB= -10V, IE=0A, f=1MHz

200

MHz

Output capacitance

C^ob

hFE Classification

Marking

h^FE

82 180

120 270

180 390

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