Datasheet > 2SA1576UB-R

2SA1576UB-R

更新时间： 2024-11-07 05:09:31

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	95K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, UMT3F, 3 PIN

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2SA1576UB-R 数据手册

General purpose small signal amplifier

(50V, 0.15A)

2SA1576UB

Applications

Dimensions (Unit : mm)

General purpose small signal amplifier.

UMT3F

2.0

0.9

0.32

(3)

Features

1) Excellent h^FElinearity.

2) Complements the 2SC4081UB.

(1)

(2)

0.13

0.65 0.65

1.3

Structure

PNP silicon epitaxial planar transistor.

Each lead has same dimensions

(1) Base

(2) Emitter

(3) Collector

Abbreviated symbol : F

∗ = Denotes hFE

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Symbol

Limits

−60

Unit

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

−50

−6

−150

−200

200

˚C

Collector current

∗1

∗2

Power dissipation

Junction temperature

Range of storage temperature

150

Tstg

−

55 to +150

˚C

∗1 Pw=1ms Single pulse

∗2 Each terminal mounted on a recommended land

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BVCEO

BV^CBO

BVEBO

−50

−60

−6

−

−1mA

−50μA

−

CBO

EBO

CE(sat)

−

−100

−0.5

390

−

−60V

−6V

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current gain

−

C/I

−50mA/−5mA

−6V, I −1mA

2mA, f

0A, f 1MHz

120

−

Transition frequency

140

4.0

MHz

−12V, I

=100MHz

Output capacitance

Cob

−

5.0

www.rohm.com

2010.09 - Rev.D

1/2

12 3

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