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2SA1576UB-Q PDF预览

2SA1576UB-Q

更新时间: 2024-09-16 20:08:27
品牌 Logo 应用领域
罗姆 - ROHM 放大器光电二极管晶体管
页数 文件大小 规格书
3页 137K
描述
150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, UMT3F, 3 PIN

2SA1576UB-Q 技术参数

生命周期:Active零件包装代码:SC-85
包装说明:UMT3F, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.59
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHzBase Number Matches:1

2SA1576UB-Q 数据手册

 浏览型号2SA1576UB-Q的Datasheet PDF文件第2页浏览型号2SA1576UB-Q的Datasheet PDF文件第3页 
General purpose small signal amplifier  
(50V, 0.15A)  
2SA1576UB  
Applications  
Dimensions (Unit : mm)  
General purpose small signal amplifier.  
UMT3F  
2.0  
0.9  
0.32  
(3)  
Features  
1) Excellent hFE linearity.  
2) Complements the 2SC4081UB.  
(1)  
(2)  
0.13  
0.65 0.65  
1.3  
Structure  
PNP silicon epitaxial planar transistor.  
Each lead has same dimensions  
(1) Base  
(2) Emitter  
(3) Collector  
Abbreviated symbol : F  
∗ = Denotes hFE  
Absolute maximum ratings (Ta=25C)  
Parameter  
Collector-base voltage  
Symbol  
Limits  
60  
Unit  
V
VCBO  
VCEO  
VEBO  
Collector-emitter voltage  
Emitter-base voltage  
50  
V
6  
V
I
C
150  
200  
200  
mA  
mA  
mW  
˚C  
Collector current  
1  
2  
I
CP  
Power dissipation  
P
D
Junction temperature  
Range of storage temperature  
Tj  
150  
Tstg  
55 to +150  
˚C  
1 Pw=1ms Single pulse  
2 Each terminal mounted on a recommended land  
Electrical characteristics (Ta=25C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCEO  
BVCBO  
BVEBO  
50  
60  
6  
V
V
I
I
I
C
=
=
1mA  
50μA  
50μA  
C
V
E=  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
0.5  
390  
nA  
nA  
V
V
CB  
EB  
=
60V  
6V  
Emitter cutoff current  
I
V
=
Collector-emitter saturation voltage  
DC current gain  
V
I
C/I  
B=  
50mA/5mA  
6V, I 1mA  
2mA, f  
0A, f 1MHz  
h
120  
V
V
V
CE  
CE  
CB  
=
=
=
C=  
Transition frequency  
f
T
140  
4.0  
MHz  
pF  
12V, I  
12V, I  
E
=
=100MHz  
Output capacitance  
Cob  
5.0  
E
=
=
www.rohm.com  
2010.09 - Rev.D  
1/2  
c
2009 ROHM Co., Ltd. All rights reserved.  

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