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2SA1576 PDF预览

2SA1576

更新时间: 2024-11-01 07:29:43
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 46K
描述
PNP silicon Transistor

2SA1576 数据手册

  
SMD Type  
Transistors  
PNP silicon Transistor  
2SA1576  
Features  
Low noise:NF=0.5dB(TYP.)  
Epitaxial planar type.  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-50  
Unit  
V
-40  
V
-5  
V
-100  
A
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
W
Tj  
125  
Tstg  
-55 to +125  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
-50  
-40  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO IC=-50ìA  
BVCEO IC=-1mA  
BVEBO IE=-50ìA  
V
V
ICBO  
IEBO  
VCB=-30V  
VEB=-4V  
-0.5  
-0.5  
-0.5  
560  
ìA  
ìA  
V
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current transfer ratio  
Transition frequency  
VCE(sat) IC/IB=-50mA/-5mA  
hFE  
fT  
VCE=-6V, IC=-1mA  
VCE=-12V, IE=2mA  
120  
140  
3.5  
MHz  
pF  
Output capacitance  
Cob  
VCB=-12V, IE=0A, f=1MHz  
hFE Classification  
Marking  
hFE  
Q
R
S
120 270  
180 390  
270 560  
1
www.kexin.com.cn  

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