Datasheet > 2SA1576A

2SA1576A

更新时间： 2024-11-27 06:22:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	382K
描述
PNP Silicon Epitaxial Planar Transistor

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2SA1576A 数据手册

2SA1576A

PNP Silicon

Elektronische Bauelemente

Epitaxial Planar Transistor

RoHS Compliant Product

Description

The 2SA1576Ais designed for use

in driver stage of AF amplifier and

general purpose amplificaion.

Feature

*Complements the 2SC4081

Millimeter

Min. Max.

0.42 REF.

REF.

Min.

Max.

1.10

0.10

1.00

2.20

1.35

2.40

0.80

0.15

0.25

0.10

0.35

0.40

0.25

0.80

1.80

1.15

1.80

0.65 REF.

0.15 BSC.

Absolute Maximum Ratings at Ta = 25^oC

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

-60

Unit

-50

-6

-150

Total Power Dissipation

225

Storage

and

Tstg

Junction

Temperature

Tj,

-55~+150

Characteristics at Ta = 25^oC

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Cutoff Current

Collector Saturation Voltage

DC Current Gain

Symbol Min Typ. Max

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

-60

IC=-50uA

-50

IC=-1mA

-6

IE=-50uA

-100

-500

560

VCB=-60V

IEBO

VEB=-6V

VCE(sat)

hFE

IC=-50mA, IB=-5 mA

VCE=-6V, IC=-1m

VCE=-12V, IC=-2mA, f=100MHz

VCB=-12V, f=1MHz, IE=0

120

Gain-Bandwidth Product

140

MHz

Output Capacitance

Cob

Classification of hFE

Rank

5AQ

5AR

5AS

Range

120 - 270

180 - 390

270 - 560

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

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