Datasheet > 2SA1576A

2SA1576A

更新时间： 2024-11-30 14:53:51

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	614K
描述
双极型晶体管

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技术参数
数据手册

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2SA1576A 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	50
Collector Current - Continuous：	0.15	DC current gain - Min：	120
DC current gain - Max：	560	Transition frequency：	100
Package：	SOT-323	Storage Temperature Range：	-55-150
class：	Transistors

2SA1576A 数据手册

2SA1576A

SOT-323 Transistor(PNP)

1. BASE

SOT-323

2. EMITTER

3. COLLECTOR

Features

Excellent h_FElinearity

Complements the 2SC4081

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-60

Units

Dimensions in inches and (millimeters)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-6

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-150

200

℃

P_C

T_J

150

T_stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

-60

-50

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-50μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-50μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=-60V,I_E=0

-0.1

560

-0.5

μA

Emitter cut-off current

V_EB=-6V,I_C=0

DC current gain

V_CE=-6V,I_C=-1mA

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-50mA,I_B=-5mA

V_CE=-12V,I_C=-2mA,f=30MHz

V_CB=-12V,I_E=0,f=1MHz

140

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

180-390

120-270

270-560

Range

Marking

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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