Datasheet > 2SA1576AP

2SA1576AP

更新时间： 2024-11-05 08:29:55

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	88K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

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数据手册

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2SA1576AP 数据手册

M C C

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20736 Marilla Street Chatsworth

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2SA1576A

Micro Commercial Components

Features

 Excellent h_FELinearity

PNP Silicon

Epitaxial Transistors

 Complementary to 2SC4081

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0



Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

-50

Unit

SOT-323

-60

-6

-150

200

150

P_C

Collector power dissipation

Junction Temperature

T_J

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25 Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

I_CBO

Collector Cutoff Current

(V_CB=-60Vdc)

---

-100

nAdc

I_EBO

Emitter Cutoff Current

(V_EB=-6.0Vdc)

DIMENSIONS

INCHES

ON CHARACTERISTICS

BV_CBO

BV_CEO

BV_EBO

h_FE

Collector-base breakdown voltage

(I_C=-50µAdc )

-60

---

Vdc

---

DIM

MIN

.071

.045

.079

MAX

.087

.053

.087

MIN

1.80

1.15

2.00

MAX

NOTE

2.20

1.35

2.20

Collector-emitter breakdown

(I =-1µAdc)

-50

-6

---

voltage

.026 Nominal

0.65Nominal

1.20

.30

.000

.90

.100

.30

.047

.055

.016

.004

.039

.010

.016

1.40

.40

.100

1.00

.250

.40

.012

.000

.035

.004

.012

Emitter-base breakdown voltage

(I_E=-50µAdc)

---

DC Current Gain

(I_C=-1mAdc, V_CE=-6.0Vdc)

120

---

560

-0.5

---

Suggested Solder

Pad Layout

0.70

V_CE(sat)

Collector Saturation Voltage

(I_C=-50mAdc, I_B=-5.0mAdc)

---

Vdc

C_ob

Output Capacitance

(V_CB=-12.0Vdc, I_E=0, f=1.0MHz)

---

5.0

0.90

1.90

f_T

Gain Bandwidth product

(V_CE=-12Vdc, I_E=2mAdc,f=30MHz)

---

100

---

MHz

^FECLASSIFICATION

0.65

Rank

h_FE

0.65

120~270

180~390

270~560

Marking

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Revision: 3

2007/01/25

1 of 3

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