Datasheet > 2N6788

2N6788

更新时间： 2024-11-24 07:29:11

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美高森美 - MICROSEMI		/
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4页	179K
描述
N-CHANNEL MOSFET

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数据手册
替代型号

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2N6788 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

N-CHANNEL MOSFET

Qualified per MIL-PRF-19500/555

DEVICES

LEVELS

2N6788

2N6788U

JAN

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Drain – Source Voltage

Gate – Source Voltage

Symbol

V_DS

Value

100

Unit

Vdc

V_GS

± 20

Continuous Drain Current

T_C= +25°C

2N6788

2N3788U

6.0

4.5

I_D1

I_D2

P_tl

Adc

Continuous Drain Current

T_C= +100°C

2N6788

2N3788U

3.5

2.8

2N6788

2N3788U

20 ⁽¹⁾

Max. Power Dissipation

TO-205AF

(formerly TO-39)

Drain to Source On State Resistance

Operating & Storage Temperature

R_ds(on)

0.30 ⁽²⁾

T_op, T_stg

-55 to +150

°C

Note: (1) Derated Linearly by 0.16 W/°C (2N6788); 0.11 W/°C (2N6788U) for T_C> +25°C

(2) V_GS= 10Vdc, I_D= 3.5A (2N6788), 2.8A (2N6788U)

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol Min. Max.

Unit

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 1mAdc

V_(BR)DSS

100

Vdc

U – 18 LCC

Gate-Source Voltage (Threshold)

V_DS≥ V_GS, I_D= 0.25mA

V_GS(th)1

V_GS(th)2

V_GS(th)3

2.0

1.0

4.0

5.0

_DS≥ V_GS, I_D= 0.25mA, T_j= +125°C

V_DS≥ V_GS, I_D= 0.25mA, T_j= -55°C

Gate Current

V_GS= ±20V, V_DS= 0V

I_GSS1

I_GSS2

±100

±200

nAdc

_GS= ±20V, V_DS= 0V, T_j= +125°C

T4-LDS-0164 Rev. 1 (100553)

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2N6788 替代型号

型号	品牌	替代类型	描述	数据表
2N6782	INFINEON	功能相似	100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6782 with Hermetic Packagi
IRFF120	INFINEON	功能相似	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

与2N6788相关器件

型号	品牌	获取价格	描述	数据表
2N6788E	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6788E3	MICROSEMI	获取价格	Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Meta
2N6788EA	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6788EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6788EB	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6788EC	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6788ECPBF	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6788ED	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6788L	SEME-LAB	获取价格	N-Channel MOSFET
2N6788LCC4	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET ENHANCEMENT MODE