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2N6788 PDF预览

2N6788

更新时间: 2024-02-07 11:22:24
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 179K
描述
N-CHANNEL MOSFET

2N6788 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220SM包装说明:SMALL OUTLINE, R-CDSO-N3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:100 V最大漏极电流 (ID):6 A
最大漏源导通电阻:1.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CDSO-N3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):225极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

2N6788 数据手册

 浏览型号2N6788的Datasheet PDF文件第2页浏览型号2N6788的Datasheet PDF文件第3页浏览型号2N6788的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
N-CHANNEL MOSFET  
Qualified per MIL-PRF-19500/555  
DEVICES  
LEVELS  
2N6788  
2N6788U  
JAN  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Drain – Source Voltage  
Gate – Source Voltage  
Symbol  
VDS  
Value  
100  
Unit  
Vdc  
Vdc  
VGS  
± 20  
Continuous Drain Current  
TC = +25°C  
2N6788  
2N3788U  
6.0  
4.5  
ID1  
ID2  
Ptl  
Adc  
Adc  
W
Continuous Drain Current  
TC = +100°C  
2N6788  
2N3788U  
3.5  
2.8  
2N6788  
2N3788U  
20 (1)  
14  
Max. Power Dissipation  
TO-205AF  
(formerly TO-39)  
Drain to Source On State Resistance  
Operating & Storage Temperature  
Rds(on)  
0.30 (2)  
Ω
Top, Tstg  
-55 to +150  
°C  
Note: (1) Derated Linearly by 0.16 W/°C (2N6788); 0.11 W/°C (2N6788U) for TC > +25°C  
(2) VGS = 10Vdc, ID = 3.5A (2N6788), 2.8A (2N6788U)  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol Min. Max.  
Unit  
Drain-Source Breakdown Voltage  
VGS = 0V, ID = 1mAdc  
V(BR)DSS  
100  
Vdc  
Vdc  
U – 18 LCC  
Gate-Source Voltage (Threshold)  
VDS VGS, ID = 0.25mA  
VGS(th)1  
VGS(th)2  
VGS(th)3  
2.0  
1.0  
4.0  
5.0  
V
DS VGS, ID = 0.25mA, Tj = +125°C  
VDS VGS, ID = 0.25mA, Tj = -55°C  
Gate Current  
VGS = ±20V, VDS = 0V  
IGSS1  
IGSS2  
±100  
±200  
nAdc  
V
GS = ±20V, VDS = 0V, Tj = +125°C  
T4-LDS-0164 Rev. 1 (100553)  
Page 1 of 4  

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