是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220SM | 包装说明: | SMALL OUTLINE, R-CDSO-N3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 6 A |
最大漏源导通电阻: | 1.8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CDSO-N3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 225 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6788E | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6788E3 | MICROSEMI | Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Meta |
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2N6788EA | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6788EAPBF | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6788EB | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6788EC | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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