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2N6768 PDF预览

2N6768

更新时间: 2024-11-24 12:50:03
品牌 Logo 应用领域
SEME-LAB /
页数 文件大小 规格书
2页 43K
描述
N-CHANNEL POWER MOSFET

2N6768 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-3
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliant风险等级:5.08
其他特性:AVALANCHE RATED雪崩能效等级(Eas):11.3 mJ
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:400 V最大漏极电流 (ID):14 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):56 A
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

2N6768 数据手册

 浏览型号2N6768的Datasheet PDF文件第2页 
IRF350  
2N6768  
MECHANICAL DATA  
Dimensions in mm (inches)  
N-CHANNEL  
POWER MOSFET  
39.95 (1.573)  
max.  
30.40 (1.197)  
30.15 (1.187)  
17.15 (0.675)  
16.64 (0.655)  
VDSS  
ID(cont)  
RDS(on)  
400V  
14A  
4.09 (0.161)  
3.84 (0.151)  
dia.  
2
1
2 plcs.  
Ω
0.300  
FEATURES  
• REPETITIVE AVALANCHE RATINGS  
• DYNAMIC DV/DT RATING  
20.32 (0.800)  
18.80 (0.740)  
dia.  
• HERMETICALL SEALED  
• SIMPLE DRIVE REQUIREMENTS  
• EASE OF PARALLELING  
1.09 (0.043)  
0.97 (0.038)  
dia.  
2 plcs.  
TO–3 (TO-204AA) Metal Package  
Pin 1 – Source  
Pin 2 – Gate  
Case – Drain  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
Gate – Source Voltage  
20V  
14A  
GS  
I
Continuous Drain Current  
(V = 0 , T  
= 25°C)  
D
GS  
case  
case  
(V = 0 , T  
= 100°C)  
9.0A  
GS  
1
I
Pulsed Drain Current  
56A  
DM  
P
Power Dissipation @ T  
= 25°C  
150W  
D
case  
Linear Derating Factor  
1.2W/°C  
11.3mJ  
14A  
3
E
I
Single Pulse Avalanche Energy  
AS  
AR  
1
Avalanche Current  
AR  
1
E
Repetitive Avalanche Energy  
15mJ  
4
dv/dt  
Peak Diode Recovery  
4.0V/ns  
-55 to +150°C  
T , T  
Operating and Storage Temperature Range  
J
stg  
Notes  
1) Pulse Width 300μs, Duty Cycle 2%  
2) Repetitive Rating – Pulse width limited by maximum junction temperature.  
3) V  
4) I  
= 50V ,Peak I = 14A , Starting T = 25°C  
DD  
SD  
L
J
14A , di/dt 145A/μs , V  
400V, T 150°C , Suggested R = 2.35Ω  
DD  
J
G
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 6252  
Issue 1  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  

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