Datasheet > 2N6770_10

2N6770_10

更新时间： 2024-11-20 07:29:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	240K
描述
N-CHANNEL MOSFET

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数据手册

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2N6770_10 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

N-CHANNEL MOSFET

Qualified per MIL-PRF-19500/543

DEVICES

LEVELS

JAN

2N6770

2N6770T1

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Drain – Source Voltage

Symbol

Value

Unit

V_DS

V_GS

500

Vdc

Gate – Source Voltage

± 20

Continuous Drain Current

I_D1

I_D2

P_tl

Adc

T_C= +25°C

T_C= +100°C

T_C= +25°C

Continuous Drain Current

Max. Power Dissipation

7.75

150 ⁽¹⁾

2N6770

TO-204AA (TO-3)

Drain to Source On State Resistance

Operating & Storage Temperature

R_ds(on)

0.4 ⁽²⁾

T_op, T_stg

-55 to +150

°C

Note: (1) Derated Linearly by 1.2 W/°C for T_C> +25°C

(2) V_GS= 10Vdc, I_D= 7.75A

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max.

OFF CHARACTERTICS

Drain-Source Breakdown Voltage

Unit

Vdc

V_(BR)DSS

500

_GS= 0V, I_D= 1mAdc

Gate-Source Voltage (Threshold)

V_DS≥ V_GS, I_D= 0.25mA

V_GS(th)1

V_GS(th)2

V_GS(th)3

2.0

1.0

4.0

5.0

2N6770T1 (TO-254AA)

_DS≥ V_GS, I_D= 0.25mA, T_j= +125°C

_DS≥ V_GS, I_D= 0.25mA, T_j= -55°C

Gate Current

_GS= ±20V, V_DS= 0V

V_GS= ±20V, V_DS= 0V, T_j= +125°C

I_GSS1

I_GSS2

±100

±200

nAdc

Drain Current

_GS= 0V, V_DS= 400V

_GS= 0V, V_DS= 500V, T_j= +125°C

I_DSS1

I_DSS2

I_DSS3

1.0

µAdc

mAdc

V_GS= 0V, V_DS= 400V, T_j= +125°C

0.25 mAdc

Static Drain-Source On-State Resistance

_GS= 10V, I_D2= 7.75A pulsed

r_DS(on)1

r_DS(on)2

0.4

0.5

V_GS= 10V, I_D1= 12A pulsed

T_j= +125°C

_GS= 10V, I_D2= 7.75A pulsed

r_DS(on)3

V_SD

0.88

1.7

Diode Forward Voltage

V_GS= 0V, I_D1= 12A pulsed

Vdc

T4-LDS-0044 Rev. 2 (101484)

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