TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
DEVICES
LEVELS
JAN
2N6770
2N6770T1
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Symbol
Value
Unit
VDS
VGS
500
Vdc
Vdc
Gate – Source Voltage
± 20
Continuous Drain Current
ID1
ID2
Ptl
12
Adc
Adc
W
TC = +25°C
TC = +100°C
TC = +25°C
Continuous Drain Current
Max. Power Dissipation
7.75
150 (1)
2N6770
TO-204AA (TO-3)
Drain to Source On State Resistance
Operating & Storage Temperature
Rds(on)
0.4 (2)
Ω
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 7.75A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max.
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
Unit
Vdc
Vdc
V(BR)DSS
500
V
GS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
2N6770T1 (TO-254AA)
V
V
DS ≥ VGS, ID = 0.25mA, Tj = +125°C
DS ≥ VGS, ID = 0.25mA, Tj = -55°C
Gate Current
GS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
V
nAdc
Drain Current
V
V
GS = 0V, VDS = 400V
GS = 0V, VDS = 500V, Tj = +125°C
IDSS1
IDSS2
IDSS3
25
1.0
µAdc
mAdc
VGS = 0V, VDS = 400V, Tj = +125°C
0.25 mAdc
Static Drain-Source On-State Resistance
V
GS = 10V, ID2 = 7.75A pulsed
rDS(on)1
rDS(on)2
0.4
0.5
Ω
Ω
VGS = 10V, ID1 = 12A pulsed
Tj = +125°C
V
GS = 10V, ID2 = 7.75A pulsed
rDS(on)3
VSD
0.88
1.7
Ω
Diode Forward Voltage
VGS = 0V, ID1 = 12A pulsed
Vdc
T4-LDS-0044 Rev. 2 (101484)
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