生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.77 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
基于收集器的最大容量: | 60 pF | 集电极-发射极最大电压: | 350 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 40 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz | 最大关闭时间(toff): | 3100 ns |
最大开启时间(吨): | 450 ns | VCEsat-Max: | 1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6772-6263 | RENESAS |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6772-6264 | RENESAS |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6772-DR6259 | RENESAS |
获取价格 |
1A, 350V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6772-DR6269 | RENESAS |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6772-DR6280 | RENESAS |
获取价格 |
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6773 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 1A I(C) | TO-220AB | |
2N6773-6258 | RENESAS |
获取价格 |
1A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6773-6263 | RENESAS |
获取价格 |
1A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6773-6264 | RENESAS |
获取价格 |
1A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6773-6265 | RENESAS |
获取价格 |
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |