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2N6660JTVP02 PDF预览

2N6660JTVP02

更新时间: 2024-01-20 11:18:42
品牌 Logo 应用领域
威世 - VISHAY 放大器晶体管
页数 文件大小 规格书
6页 109K
描述
19500/547 JANTXV2N6660P WITH PIND

2N6660JTVP02 技术参数

生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.2
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.99 A最大漏极电流 (ID):0.99 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):10 pFJEDEC-95代码:TO-205AD
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):6.25 W
子类别:FET General Purpose Powers表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2N6660JTVP02 数据手册

 浏览型号2N6660JTVP02的Datasheet PDF文件第1页浏览型号2N6660JTVP02的Datasheet PDF文件第2页浏览型号2N6660JTVP02的Datasheet PDF文件第3页浏览型号2N6660JTVP02的Datasheet PDF文件第5页浏览型号2N6660JTVP02的Datasheet PDF文件第6页 
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV  
www.vishay.com  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
10  
1
120  
V
= 0 V  
V
= 5 V  
GS  
DS  
f = 1 MHz  
100  
80  
60  
40  
20  
0
T
J
= 150 °C  
25 °C  
0.1  
0.01  
C
iss  
C
oss  
C
rss  
125 °C  
1.0  
- 55 °C  
0.5  
1.5  
2.0  
0
10  
20  
30  
40  
50  
V
- Gate-to-Source Voltage (V)  
V
- Drain-to-Source Voltage (V)  
GS  
DS  
Threshold Region  
Capacitance  
100  
50  
15.0  
12.5  
10.0  
7.5  
5.0  
2.5  
0
V
R
V
= 25 V  
= 25 Ω  
= 0 V to 10 V  
DD  
g
GS  
I
= 1.0 A  
D
V
= 30 V  
DS  
20  
10  
5
48 V  
t
d(off)  
t
t
r
d(on)  
t
f
2
1
0.1  
1
10  
0
100  
200  
300  
400  
500  
600  
I
- Drain Current (A)  
D
Q
- Total Gate Charge (pC)  
g
Gate Charge  
Load Condition Effects on Switching  
1.0  
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
Single Pulse  
0.1  
P
DM  
0.05  
t
1
t
2
t
t
1
2
0.02  
0.01  
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 20 °C/W  
thJC  
(t)  
3. T - T = P  
JM DM thJC  
Z
C
0.01  
0.1  
1.0  
10  
100  
1 K  
10 K  
t
1
- Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?70223.  
S11-1542-Rev. D, 01-Aug-11  
Document Number: 70223  
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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