生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.63 |
最大集电极电流 (IC): | 0.5 A | 基于收集器的最大容量: | 7 pF |
集电极-发射极最大电压: | 40 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 14000 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
功耗环境最大值: | 1.5 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 125 MHz |
VCEsat-Max: | 1.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6427RLRF | MOTOROLA |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2N6427-STYLE-B | ALLEGRO |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2N6427-STYLE-G | ALLEGRO |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2N6427TRC | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N6427TRE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N6427TRELEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N6427TRF | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N6427TRG | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N6427ZL1 | MOTOROLA |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2N6428 | SAMSUNG |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR |