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2N6427RLRE PDF预览

2N6427RLRE

更新时间: 2024-11-04 20:04:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体管
页数 文件大小 规格书
5页 164K
描述
500mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

2N6427RLRE 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.63
最大集电极电流 (IC):0.5 A基于收集器的最大容量:7 pF
集电极-发射极最大电压:40 V配置:DARLINGTON
最小直流电流增益 (hFE):14000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
功耗环境最大值:1.5 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
VCEsat-Max:1.5 VBase Number Matches:1

2N6427RLRE 数据手册

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与2N6427RLRE相关器件

型号 品牌 获取价格 描述 数据表
2N6427RLRF MOTOROLA

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Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2N6427-STYLE-B ALLEGRO

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Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2N6427-STYLE-G ALLEGRO

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Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2N6427TRC CENTRAL

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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N6427TRE CENTRAL

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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N6427TRELEADFREE CENTRAL

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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N6427TRF CENTRAL

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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N6427TRG CENTRAL

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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N6427ZL1 MOTOROLA

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Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2N6428 SAMSUNG

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NPN EPITAXIAL SILICON TRANSISTOR