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2N6371 PDF预览

2N6371

更新时间: 2024-11-02 06:17:15
品牌 Logo 应用领域
COMSET 晶体晶体管局域网高功率电源
页数 文件大小 规格书
4页 201K
描述
HIGH POWER SILICON NPN TRANSISTORS

2N6371 数据手册

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2N6253 - 2N6254 - 2N6371  
HIGH POWER SILICON NPN TRANSISTORS  
The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide  
variety of high-power applications. The construction of these devices renders them  
highly resistant to second breakdown over a wide range of operating conditions.  
These devices differ in maximum ratings for voltage and power dissipation. All are  
supplied in JEDEC TO-3 hermetic steel packages.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
45  
80  
40  
55  
100  
50  
55  
85  
45  
55  
90  
50  
5
Collector-Emitter Voltage  
Collector-Base Voltage (*)  
VCEO(SUS)  
V
VCBO  
V
V
V
V
Collector-Emitter Voltage  
VCER(SUS)  
VCEV(SUS)  
VEBO  
RBE=100  
Collector-Emitter Voltage  
VBE=-1.5V  
7
5
Emitter-Base Voltage  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
Collector Current  
Base Current  
15  
IC  
IB  
A
A
7
COMSET SEMICONDUCTORS  
1/4  

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