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2N5963 PDF预览

2N5963

更新时间: 2024-11-24 22:36:47
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
1页 66K
描述
NPN SILICON TRANSISTOR

2N5963 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.16其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):1200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

2N5963 数据手册

  
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