是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
风险等级: | 5.16 | Is Samacsys: | N |
其他特性: | LOW NOISE | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 1200 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN (315) | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 10 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5963TRG | CENTRAL |
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Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N5963TRH | CENTRAL |
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Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | |
2N5966 | MICROSEMI |
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Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, | |
2N5966E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, | |
2N5967 | MICROSEMI |
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Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal, | |
2N5967E3 | MICROSEMI |
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Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal, | |
2N5968 | ETC |
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TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 40A I(C) | TO-210AE | |
2N5969 | MICROSEMI |
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Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin, | |
2N5969E3 | MICROSEMI |
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Power Bipolar Transistor, 40A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin, | |
2N5970 | MICROSEMI |
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Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |