Datasheet > 2N5973

2N5973

更新时间： 2024-11-21 06:26:43

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	43K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2N5973 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2N5973

DESCRIPTION

·With TO-3 package

·Low collector-emitter saturation voltage

APPLICATIONS

·Designed for general-purpose power

amplifier and switching applications

PINNING

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

120

100

UNIT

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

P_D

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

150

-65~200

℃

T_j

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

1.1

℃/W

JMnic

12 3

中文翻译

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