Product Specification
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Silicon NPN Power Transistors
2N5989 2N5990 2N5991
DESCRIPTION
·With TO-3PN package
·Complement to type 2N5986 2N5987 2N5988
·Low collector-emitter saturation voltage
APPLICATIONS
·Designed for use in general purpose
power amplifier and switching circuits.
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
60
UNIT
2N5989
2N5990
2N5991
2N5989
2N5990
2N5991
VCBO
Collector-base voltage
Open emitter
V
80
100
40
VCEO
Collector-emitter voltage
Open base
V
60
80
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
5
V
A
12
Collector current-peak
Base current
20
A
4
A
PC
Tj
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
100
150
-65~150
W
℃
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
MAX
UNIT
Rth j-c
1.25
℃/W
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