Datasheet > 2N5991

2N5991

更新时间： 2024-11-25 06:18:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	123K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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2N5991 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.81

2N5991 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5989 2N5990 2N5991

DESCRIPTION

·With TO-3PN package

·Complement to type 2N5986/5987/5988

·Low collector saturation voltage

APPLICATIONS

·Designed for use in general purpose

power amplifier and switching circuits.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5989

2N5990

2N5991

2N5989

2N5990

2N5991

V_CBO

Collector-base voltage

Open emitter

100

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

Collector current-peak

Base current

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

100

150

-65~150

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

MAX

UNIT

R_{th j-c}

1.25

℃/W

12 3

中文翻译

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