生命周期: | Obsolete | 零件包装代码: | TO-3 |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.44 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 120 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 1 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5759E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL | |
2N575A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 25A I(C) | STR-1/4 | |
2N5760 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2N5760 | APITECH |
获取价格 |
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
2N5760 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2N5760 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2N5760E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 6A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL | |
2N5764 | NJSEMI |
获取价格 |
SI NPN POWER BJT | |
2N5769 | FAIRCHILD |
获取价格 |
NPN Switching Transistor | |
2N5769 | CENTRAL |
获取价格 |
Small Signal Transistors TO-92 Case (Continued) |