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2N5760 PDF预览

2N5760

更新时间: 2024-11-15 20:12:27
品牌 Logo 应用领域
APITECH /
页数 文件大小 规格书
2页 220K
描述
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

2N5760 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.44
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):1 MHz
VCEsat-Max:1 VBase Number Matches:1

2N5760 数据手册

 浏览型号2N5760的Datasheet PDF文件第2页 
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