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2N5769APPLEADFREE PDF预览

2N5769APPLEADFREE

更新时间: 2024-11-15 13:04:03
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管
页数 文件大小 规格书
2页 316K
描述
Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

2N5769APPLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.64集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):500 MHz最大关闭时间(toff):18 ns
Base Number Matches:1

2N5769APPLEADFREE 数据手册

 浏览型号2N5769APPLEADFREE的Datasheet PDF文件第2页 
2N5769  
PN2369A  
www.centralsemi.com  
DESCRIPTION:  
NPN SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR 2N5769 and  
PN2369A are epitaxial planar NPN Silicon Transistors  
designed for ultra high speed saturated switching  
applications.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
40  
40  
CBO  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
CES  
CEO  
EBO  
V
V
15  
4.5  
V
Continuous Collector Current  
Peak Collector Current  
I
200  
mA  
mA  
mW  
°C  
C
I
500  
CM  
P
Power Dissipation  
350  
D
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=20V  
400  
nA  
CBO  
CBO  
CES  
EBO  
CB  
CB  
CE  
EB  
=20V, T =125°C  
A
=20V (2N5769)  
30  
400  
1.0  
µA  
nA  
µA  
V
=4.5V (2N5769)  
BV  
BV  
BV  
BV  
I =10µA  
40  
40  
15  
4.5  
CBO  
CES  
C
I =10µA  
V
C
I =10mA  
V
CEO  
C
I =10µA  
V
EBO  
E
V
V
V
V
V
V
I =10mA, I =1.0mA  
200  
250  
500  
850  
1.15  
1.6  
mV  
mV  
mV  
mV  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =30mA, I =3.0mA  
C
B
I =100mA, I =10mA  
C
B
I =10mA, I =1.0mA  
700  
C
B
I =30mA, I =3.0mA  
C
B
I =100mA, I =10mA  
V
C
B
h
h
h
h
V
=0.35V, I =10mA (2N5769)  
40  
40  
30  
20  
120  
120  
CE  
CE  
CE  
CE  
C
V
V
V
=1.0V, I =10mA (PN2369A)  
FE  
C
=0.4V, I =30mA  
FE  
C
=1.0V, I =100mA  
FE  
C
R1 (10-March 2011)  

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