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2N5770 PDF预览

2N5770

更新时间: 2024-11-14 22:17:35
品牌 Logo 应用领域
MICRO-ELECTRONICS 晶体小信号双极晶体管射频小信号双极晶体管局域网
页数 文件大小 规格书
1页 64K
描述
NPN SILICON PLANAR EPITAXIAL TRANSISTOR

2N5770 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.6
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.7 pF
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.7 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):600 MHz
Base Number Matches:1

2N5770 数据手册

  

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