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2N5771 PDF预览

2N5771

更新时间: 2024-11-14 22:35:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管
页数 文件大小 规格书
4页 129K
描述
PNP Switching Transistor

2N5771 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.72
最大集电极电流 (IC):0.2 A基于收集器的最大容量:3 pF
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):850 MHzBase Number Matches:1

2N5771 数据手册

 浏览型号2N5771的Datasheet PDF文件第2页浏览型号2N5771的Datasheet PDF文件第3页浏览型号2N5771的Datasheet PDF文件第4页 
Discrete POWER & Signal  
Technologies  
2N5771  
MMBT5771  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 3R  
E
PNP Switching Transistor  
This device is designed for very high speed saturate switching at  
collector currents to 100 mA. Sourced from Process 65. See  
PN4258 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
15  
15  
V
V
4.5  
V
Collector Current - Continuous  
200  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5771  
*MMBT5771  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
357  
556  
Rθ  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

2N5771 替代型号

型号 品牌 替代类型 描述 数据表
2N5771 CENTRAL

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