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2N5770 PDF预览

2N5770

更新时间: 2024-11-14 22:17:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
2页 29K
描述
NPN RF Transistor

2N5770 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.02最大集电极电流 (IC):0.05 A
基于收集器的最大容量:1.1 pF集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.7 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):900 MHzBase Number Matches:1

2N5770 数据手册

 浏览型号2N5770的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
2N5770  
TO-92  
C
B
E
NPN RF Transistor  
This device is designed for use as RF amplifiers, oscillators and  
multipliers with collector currents in the 1.0 mA to 30 mA range.  
Sourced from Process 43. See PN918 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
15  
30  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
4.5  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
50  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5770  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
357  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

2N5770 替代型号

型号 品牌 替代类型 描述 数据表
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NPN RF Amplifier

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