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2N5769 PDF预览

2N5769

更新时间: 2024-11-14 22:35:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关小信号双极晶体管
页数 文件大小 规格书
2页 29K
描述
NPN Switching Transistor

2N5769 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.11Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):500 MHz
最大关闭时间(toff):18 ns最大开启时间(吨):12 ns
Base Number Matches:1

2N5769 数据手册

 浏览型号2N5769的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
2N5769  
TO-92  
C
B
E
NPN Switching Transistor  
This device is designed for high speed saturated switching  
applications at currents to 100 mA. Sourced from Process 21.  
See PN2369A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
15  
40  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
4.5  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5769  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
357  
Rθ  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

2N5769 替代型号

型号 品牌 替代类型 描述 数据表
MPSA62 ONSEMI

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