Datasheet > 2N5551BU

2N5551BU

更新时间： 2024-02-02 03:24:56

品牌	Logo	应用领域
安森美 - ONSEMI		放大器晶体管
页数	文件大小	规格书
8页	209K
描述
Small Signal NPN Bipolar Transistor

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2N5551BU 数据手册

DATA SHEET

www.onsemi.com

NPN General-Purpose

Amplifier

TO−92−3

4.825x4.76

CASE 135AN

2N5551

Description

This device is designed for general−purpose high−voltage

amplifiers and gas discharge display drivers.

TO−92−3

4.83x4.76 LEADFORMED

CASE 135AR

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

ABSOLUTE MAXIMUM RATINGS (Note 1)

MARKING DIAGRAM

Symbol

Parameter

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Value

Unit

CEO

CBO

EBO

160

A55

51(Y)

YWW

180

Collector Current − Continuous

600

°C

T , T

Operating and Storage Temperature

(Note 2)

−55 to + 150

STG

= Assembly Location

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are limiting values above which the serviceability of any

semiconductor device may be impaired.

5551(Y) = Specific Device Code

= Year

= Work Week

2. These ratings are based on a maximum junction temperature of 150°C. These

are steady−state limits. onsemi should be consulted on applications involving

pulsed or low−duty cycle operations.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

Publication Order Number:

November, 2022 − Rev. 5

2N5551T/D

12 3 4 5 6 7 8

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