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2N5551BU PDF预览

2N5551BU

更新时间: 2024-11-19 11:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
8页 209K
描述
Small Signal NPN Bipolar Transistor

2N5551BU 数据手册

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DATA SHEET  
www.onsemi.com  
NPN General-Purpose  
Amplifier  
TO923  
4.825x4.76  
CASE 135AN  
2N5551  
E
B
C
Description  
This device is designed for generalpurpose highvoltage  
amplifiers and gas discharge display drivers.  
TO923  
4.83x4.76 LEADFORMED  
CASE 135AR  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
E
Compliant  
B
C
ABSOLUTE MAXIMUM RATINGS (Note 1)  
MARKING DIAGRAM  
Symbol  
Parameter  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Value  
Unit  
V
V
CEO  
V
CBO  
V
EBO  
160  
A55  
51(Y)  
YWW  
180  
V
6
V
I
Collector Current Continuous  
600  
mA  
°C  
C
T , T  
Operating and Storage Temperature  
(Note 2)  
55 to + 150  
J
STG  
A
= Assembly Location  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are limiting values above which the serviceability of any  
semiconductor device may be impaired.  
5551(Y) = Specific Device Code  
Y
WW  
= Year  
= Work Week  
2. These ratings are based on a maximum junction temperature of 150°C. These  
are steadystate limits. onsemi should be consulted on applications involving  
pulsed or lowduty cycle operations.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
November, 2022 Rev. 5  
2N5551T/D  
 

2N5551BU 替代型号

型号 品牌 替代类型 描述 数据表
2N5551TA ONSEMI

完全替代

Small Signal NPN Bipolar Transistor
2N5551TF ONSEMI

类似代替

Small Signal NPN Bipolar Transistor
2N5551 ONSEMI

功能相似

mplifier Transistors(NPN Silicon)

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