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2N5551CN PDF预览

2N5551CN

更新时间: 2024-01-14 11:11:59
品牌 Logo 应用领域
韩国光电子 - AUK 晶体晶体管
页数 文件大小 规格书
4页 252K
描述
NPN Silicon Transistor

2N5551CN 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:7.99最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N5551CN 数据手册

 浏览型号2N5551CN的Datasheet PDF文件第2页浏览型号2N5551CN的Datasheet PDF文件第3页浏览型号2N5551CN的Datasheet PDF文件第4页 
2N5551CN  
Semiconductor  
NPN Silicon Transistor  
Descriptions  
General purpose amplifier  
High voltage application  
Features  
High collector breakdown voltage : VCBO = 180V, VCEO = 160V  
Low collector saturation voltage : VCE(sat)=0.5V(MAX.)  
Ordering Information  
Type NO.  
Marking  
Package Code  
TO-92N  
2N5551CN  
2N5551C  
Outline Dimensions  
unit : mm  
4.20~4.40  
2.25 Max.  
0.52 Max.  
0.90 Max.  
1.27 Typ.  
0.40 Max.  
1 2 3  
3.55 Typ  
PIN Connections  
1. Emitter  
2. Collector  
3. Base  
KSD-T0C061-000  
1

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